MBR60040CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Elements :

2

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Max Reverse Leakage Current :

1μA

Current - Average Rectified (Io) :

300A

Diode Element Material :

SILICON

Element Configuration :

Common Anode

JESD-30 Code :

R-PUFM-X2

Factory Lead Time :

6 Weeks

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Min Operating Temperature :

-40°C

Max Repetitive Reverse Voltage (Vrrm) :

40V

ECCN Code :

EAR99

Output Current-Max :

300A

Average Rectified Current :

600A

Max Reverse Voltage (DC) :

40V

Application :

Power

Max Surge Current :

4kA

Mounting Type :

Chassis Mount

Packaging :

Bulk

Pbfree Code :

yes

Current - Reverse Leakage @ Vr :

1mA @ 20V

Terminal Form :

UNSPECIFIED

Diode Type :

Schottky

Diode Configuration :

1 Pair Common Anode

Operating Temperature - Junction :

-55°C~150°C

Mount :

Chassis Mount

HTS Code :

8541.10.00.80

Package / Case :

Twin Tower

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

600A

Number of Phases :

1

Number of Terminations :

2

Published :

2012

Peak Reverse Current :

1A