MBR60030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount

Max Operating Temperature :

150°C

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Number of Phases :

1

Max Repetitive Reverse Voltage (Vrrm) :

30V

Application :

Power

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Reverse Voltage (DC) :

30V

Pbfree Code :

yes

Forward Current :

600A

Peak Reverse Current :

1A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Diode Configuration :

1 Pair Common Anode

Mounting Type :

Chassis Mount

JESD-30 Code :

R-PUFM-X2

RoHS Status :

RoHS Compliant

Package / Case :

Twin Tower

Average Rectified Current :

600A

Max Surge Current :

4kA

Packaging :

Bulk

HTS Code :

8541.10.00.80

Current - Average Rectified (Io) :

300A

Diode Element Material :

SILICON

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Type :

Schottky

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Number of Elements :

2

Output Current-Max :

300A

Min Operating Temperature :

-40°C