MBR60030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Twin Tower

Factory Lead Time :

6 Weeks

Max Surge Current :

4kA

Output Current-Max :

300A

Min Operating Temperature :

-40°C

Max Reverse Leakage Current :

1μA

Peak Reverse Current :

1A

Number of Elements :

2

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Reverse Voltage (DC) :

30V

Mounting Type :

Chassis Mount

Diode Type :

Schottky

Forward Current :

600A

Current - Average Rectified (Io) :

300A

Diode Configuration :

1 Pair Common Anode

Mount :

Chassis Mount

Max Repetitive Reverse Voltage (Vrrm) :

30V

Current - Reverse Leakage @ Vr :

1mA @ 20V

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Average Rectified Current :

600A

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Packaging :

Bulk

Number of Terminations :

2

ECCN Code :

EAR99

HTS Code :

8541.10.00.80

JESD-30 Code :

R-PUFM-X2

Terminal Position :

UPPER

Pbfree Code :

yes

Max Operating Temperature :

150°C

Terminal Form :

UNSPECIFIED

Application :

Power

Diode Element Material :

SILICON

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

RoHS Status :

RoHS Compliant