MBR60035CTL

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Voltage (DC) :

35V

Package / Case :

Twin Tower

RoHS Status :

RoHS Compliant

Diode Configuration :

1 Pair Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Average Rectified Current :

300A

Reverse Current-Max :

3000μA

Terminal Position :

UPPER

Packaging :

Bulk

Application :

Power

JESD-30 Code :

R-PUFM-X2

Voltage - Forward (Vf) (Max) @ If :

600mV @ 300A

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Operating Temperature - Junction :

-55°C~150°C

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

3mA @ 35V

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

HTS Code :

8541.10.00.80

Diode Type :

Schottky

Non-rep Pk Forward Current-Max :

4000A

Number of Phases :

1

Diode Element Material :

SILICON

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mount :

Chassis Mount

Element Configuration :

Common Cathode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED