MBR600100CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Twin Tower

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Element Material :

SILICON

Number of Elements :

2

Max Operating Temperature :

150°C

Max Reverse Leakage Current :

1μA

Output Current-Max :

300A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Application :

Power

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Diode Type :

Schottky

Peak Reverse Current :

1A

Number of Phases :

1

Max Reverse Voltage (DC) :

100V

RoHS Status :

RoHS Compliant

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Repetitive Reverse Voltage (Vrrm) :

100V

Average Rectified Current :

600A

JESD-30 Code :

R-PUFM-X2

Packaging :

Bulk

Published :

2013

Pbfree Code :

yes

Mount :

Chassis Mount

Diode Configuration :

1 Pair Common Cathode

Terminal Form :

UNSPECIFIED

Number of Terminations :

2

Max Surge Current :

4kA

Forward Current :

600A

Terminal Position :

UPPER

Factory Lead Time :

6 Weeks

HTS Code :

8541.10.00.80

ECCN Code :

EAR99

Current - Average Rectified (Io) :

300A

Voltage - Forward (Vf) (Max) @ If :

880mV @ 300A

Min Operating Temperature :

-40°C