MBR600100CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Diode Configuration :

1 Pair Common Cathode

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Average Rectified Current :

600A

Max Repetitive Reverse Voltage (Vrrm) :

100V

Diode Element Material :

SILICON

Number of Terminations :

2

Current - Average Rectified (Io) :

300A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

Twin Tower

Mount :

Chassis Mount

Number of Phases :

1

RoHS Status :

RoHS Compliant

Published :

2013

Terminal Position :

UPPER

JESD-30 Code :

R-PUFM-X2

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Operating Temperature :

150°C

Peak Reverse Current :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C

Max Reverse Leakage Current :

1μA

Factory Lead Time :

6 Weeks

Max Surge Current :

4kA

Pbfree Code :

yes

HTS Code :

8541.10.00.80

Packaging :

Bulk

Diode Type :

Schottky

Number of Elements :

2

Application :

Power

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Reverse Voltage (DC) :

100V

Mounting Type :

Chassis Mount

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Output Current-Max :

300A

Voltage - Forward (Vf) (Max) @ If :

880mV @ 300A

Forward Current :

600A