MBR600200CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Lifecycle Status :

Production (Last Updated: 5 months ago)

Package / Case :

Twin Tower

Number of Elements :

2

HTS Code :

8541.10.00.80

Element Configuration :

Common Anode

JESD-30 Code :

R-PUFM-X2

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Diode Type :

Schottky

Operating Temperature (Max) :

150°C

Voltage - Forward (Vf) (Max) @ If :

920mV @ 300A

Factory Lead Time :

6 Weeks

Reverse Current-Max :

3000μA

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

Diode Configuration :

1 Pair Common Anode

Max Reverse Voltage (DC) :

200V

Application :

Power

Average Rectified Current :

300A

Pbfree Code :

yes

Diode Element Material :

SILICON

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Phases :

1

Number of Terminations :

2

Mount :

Chassis Mount

Current - Reverse Leakage @ Vr :

3mA @ 200V

Operating Temperature - Junction :

-55°C~150°C

Non-rep Pk Forward Current-Max :

4000A

Mounting Type :

Chassis Mount