MBR600200CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Operating Temperature (Max) :

150°C

Lifecycle Status :

Production (Last Updated: 5 months ago)

Packaging :

Bulk

Average Rectified Current :

300A

Max Reverse Voltage (DC) :

200V

Operating Temperature - Junction :

-55°C~150°C

Voltage - Forward (Vf) (Max) @ If :

920mV @ 300A

Current - Reverse Leakage @ Vr :

3mA @ 200V

Application :

Power

Number of Phases :

1

Element Configuration :

Common Cathode

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Pbfree Code :

yes

Reverse Current-Max :

3000μA

Diode Type :

Schottky

JESD-30 Code :

R-PUFM-X2

Number of Elements :

2

Package / Case :

Twin Tower

Diode Element Material :

SILICON

Factory Lead Time :

6 Weeks

Number of Terminations :

2

ECCN Code :

EAR99

HTS Code :

8541.10.00.80

Mount :

Chassis Mount

Terminal Form :

UNSPECIFIED

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Diode Configuration :

1 Pair Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Non-rep Pk Forward Current-Max :

4000A

Terminal Position :

UPPER