KSH117TF
- Mfr.Part #
- KSH117TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 49,327
- In Stock :
- 49,327
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -100V
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 20μA
- Max Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP - Darlington
- Power Dissipation :
- 1.75W
- Transition Frequency :
- 25MHz
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -100V
- Base Part Number :
- KSH117
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- hFE Min :
- 1000
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Frequency - Transition :
- 25MHz
- Weight :
- 260.37mg
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- JESD-30 Code :
- R-PSSO-G2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.75W
- Mount :
- Surface Mount
- Length :
- 6.6mm
- Current Rating :
- -2A
- Collector Emitter Saturation Voltage :
- 2V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 6.8mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Polarity :
- PNP
- Number of Terminations :
- 2
- Height :
- 2.3mm
- Datasheets
- KSH117TF
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PNP - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH117TF Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
KSH117TF Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 25MHz
KSH117TF Applications
There are a lot of ON Semiconductor
KSH117TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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