KSH112TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

9 Weeks

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Weight :

260.37mg

Max Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

RoHS Status :

ROHS3 Compliant

Current Rating :

2A

Max Collector Current :

2A

Transition Frequency :

25MHz

Base Part Number :

KSH112

Transistor Type :

NPN - Darlington

hFE Min :

1000

JESD-609 Code :

e3

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.75W

Height :

2.3mm

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Frequency - Transition :

25MHz

Collector Emitter Voltage (VCEO) :

100V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Width :

6.1mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Number of Terminations :

2

Collector Emitter Saturation Voltage :

2V

Pbfree Code :

yes

Voltage - Rated DC :

100V

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

100V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Length :

6.6mm

Polarity :

NPN

Mount :

Surface Mount

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

20μA