KSH122TF
- Mfr.Part #
- KSH122TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 32,204
- In Stock :
- 32,204
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.1mm
- JEDEC-95 Code :
- TO-252AA
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Polarity :
- NPN
- Number of Pins :
- 3
- Current Rating :
- 8A
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 6.6mm
- Max Power Dissipation :
- 1.75W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2013
- Max Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 4V
- Height :
- 2.4mm
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN - Darlington
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Power Dissipation :
- 1.75W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Number of Elements :
- 1
- Weight :
- 260.37mg
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Base Part Number :
- KSH122
- Max Collector Current :
- 8A
- Datasheets
- KSH122TF
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NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH122TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 8A volts can be achieved.
KSH122TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TF Applications
There are a lot of ON Semiconductor
KSH122TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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