KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 60
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Height :
- 11.2mm
- Length :
- 8.3mm
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Width :
- 3.45mm
- Base Part Number :
- KSD882
- Package / Case :
- TO-225AA, TO-126-3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency :
- 90MHz
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Published :
- 2005
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 90MHz
- Weight :
- 761mg
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 90MHz
- Element Configuration :
- Single
- Current Rating :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 300mV
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 19 Weeks
- Radiation Hardening :
- No
- Datasheets
- KSD882YSTU
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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