KSD880O
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- Mfr.Part #
- KSD880O
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220-3
- Stock
- 9,015
- In Stock ：
- 9,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 60
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Base Part Number :
- KSD880
- Voltage - Rated DC :
- 60V
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 30W
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Published :
- 2000
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 500mA 5V
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 3MHz
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 30W
- Radiation Hardening :
- No
- Datasheets
- KSD880O
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD880O Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 3MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
KSD880O Features
the DC current gain for this device is 60 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD880O Applications
There are a lot of ON Semiconductor
KSD880O applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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