KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Frequency :
- 90MHz
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSD882
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 300mV
- Lead Free :
- Lead Free
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 90MHz
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 90MHz
- Length :
- 8.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Case Connection :
- Isolated
- Factory Lead Time :
- 19 Weeks
- Current Rating :
- 3A
- Packaging :
- Tube
- Voltage - Rated DC :
- 30V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 3A
- Width :
- 3.45mm
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 761mg
- Height :
- 11.2mm
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 60
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- KSD882YSTU
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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