KSD526Y

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Mfr.Part #
KSD526Y
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 4A TO220-3
Stock
3,772
In Stock :
3,772

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
80V
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Gain Bandwidth Product :
8MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
AMPLIFIER
Mount :
Through Hole
Factory Lead Time :
2 Weeks
Mounting Type :
Through Hole
JESD-609 Code :
e3
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Collector Emitter Breakdown Voltage :
80V
Transition Frequency :
8MHz
Operating Temperature :
150°C TJ
Base Part Number :
KSD526
Package / Case :
TO-220-3
Emitter Base Voltage (VEBO) :
5V
hFE Min :
40
Frequency :
8MHz
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
450mV
Weight :
1.8g
Number of Elements :
1
Max Collector Current :
4A
Power Dissipation :
30W
Number of Terminations :
3
Current - Collector Cutoff (Max) :
30μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 5V
Collector Base Voltage (VCBO) :
80V
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Current Rating :
4A
Transistor Type :
NPN
Voltage - Rated DC :
80V
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Max Power Dissipation :
30W
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Packaging :
Bulk
Datasheets
KSD526Y
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD526Y from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:KSD526, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, KSD526Y pinout, KSD526Y datasheet PDF, KSD526Y amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD526Y ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD526Y


NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole

KSD526Y Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.

KSD526Y Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz


KSD526Y Applications


There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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