KSD526Y
- Mfr.Part #
- KSD526Y
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220-3
- Stock
- 3,772
- In Stock :
- 3,772
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Gain Bandwidth Product :
- 8MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 8MHz
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSD526
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Frequency :
- 8MHz
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 450mV
- Weight :
- 1.8g
- Number of Elements :
- 1
- Max Collector Current :
- 4A
- Power Dissipation :
- 30W
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Current Rating :
- 4A
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 30W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Bulk
- Datasheets
- KSD526Y

NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD526Y Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.
KSD526Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526Y Applications
There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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