KSD5041QTA
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- Mfr.Part #
- KSD5041QTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 20,000
- In Stock ：
- 20,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 180
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Current Rating :
- 5A
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 750mW
- Base Part Number :
- KSD5041
- Voltage - Rated DC :
- 20V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Max Power Dissipation :
- 750mW
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- NPN
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2017
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Weight :
- 240mg
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 20V
- Max Collector Current :
- 5A
- Datasheets
- KSD5041QTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 230 @ 500mA 2V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
KSD5041QTA Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QTA Applications
There are a lot of ON Semiconductor
KSD5041QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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