KSD5041QTA
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- Mfr.Part #
- KSD5041QTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 26,510
- In Stock ：
- 26,510
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 240mg
- Max Collector Current :
- 5A
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 180
- Frequency :
- 150MHz
- Max Power Dissipation :
- 750mW
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Voltage - Rated DC :
- 20V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Radiation Hardening :
- No
- Power Dissipation :
- 750mW
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Current Rating :
- 5A
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- KSD5041
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Published :
- 2017
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Datasheets
- KSD5041QTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 230 @ 500mA 2V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
KSD5041QTA Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QTA Applications
There are a lot of ON Semiconductor
KSD5041QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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