JAN2N7236U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-267AB

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

18A

Number of Terminations :

3

Pin Count :

3

Drain-source On Resistance-Max :

0.22Ohm

Series :

Military, MIL-PRF-19500/595

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Packaging :

Bulk

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Rds On (Max) @ Id, Vgs :

220m Ω @ 18A, 10V

Avalanche Energy Rating (Eas) :

500 mJ

JESD-609 Code :

e0

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Pbfree Code :

No

Power Dissipation-Max :

4W Ta 125W Tc

Pulsed Drain Current-Max (IDM) :

72A

RoHS Status :

Non-RoHS Compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Qualified

Power Dissipation :

4W

Configuration :

Single