JAN2N7227
- Mfr.Part #
- JAN2N7227
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 14A TO254AA
- Stock
- 45,857
- In Stock :
- 45,857
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reference Standard :
- MIL-19500
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Drain to Source Voltage (Vdss) :
- 400V
- Series :
- Military, MIL-PRF-19500/592
- HTS Code :
- 8541.29.00.95
- Pbfree Code :
- No
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 415m Ω @ 14A, 10V
- Additional Feature :
- High Reliability
- DS Breakdown Voltage-Min :
- 400V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 4W Ta 150W Tc
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Radiation Hardening :
- No
- Published :
- 1997
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 14A
- Terminal Form :
- PIN/PEG
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.415Ohm
- Pulsed Drain Current-Max (IDM) :
- 56A
- Mount :
- Through Hole
- Datasheets
- JAN2N7227
N-Channel Bulk 415m Ω @ 14A, 10V ±20V 110nC @ 10V 400V TO-254-3, TO-254AA (Straight Leads)
JAN2N7227 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).Peak drain current is 56A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 400V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
JAN2N7227 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)
JAN2N7227 Applications
There are a lot of Microsemi Corporation
JAN2N7227 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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