JAN2N6898

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Tc

DS Breakdown Voltage-Min :

100V

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

MIL-19500/565C

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Surface Mount :

No

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

PIN/PEG

Vgs (Max) :

±20V

Pin Count :

2

JESD-30 Code :

O-MBFM-P2

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Drain Current-Max (Abs) (ID) :

25A

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

200m Ω @ 15.8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-204AE

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

FET Type :

P-Channel

Power Dissipation-Max :

150W Tc

Package / Case :

TO-204AA, TO-3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Qualification Status :

Qualified