JAN2N6849

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

BOTTOM

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Series :

Military, MIL-PRF-19500/564

Continuous Drain Current (ID) :

6.5A

Published :

1997

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Qualified

Terminal Form :

Wire

Transistor Application :

SWITCHING

Packaging :

Bulk

Power Dissipation :

800mW

Power Dissipation-Max :

800mW Ta 25W Tc

Number of Pins :

3

FET Type :

P-Channel

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Contact Plating :

Lead, Tin

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Package / Case :

TO-205AF Metal Can

Rds On (Max) @ Id, Vgs :

320m Ω @ 6.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Vgs (Max) :

±20V