JAN2N6800

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Wire

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Voltage (Vdss) :

400V

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Case Connection :

DRAIN

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

3A

Reference Standard :

MIL-19500

DS Breakdown Voltage-Min :

400V

Series :

Military, MIL-PRF-19500/557

Packaging :

Bulk

Power Dissipation-Max :

800mW Ta 25W Tc

Terminal Position :

BOTTOM

Qualification Status :

Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-205AF Metal Can

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

34.75nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.21.00.95

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

FET Type :

N-Channel

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

14A