JAN2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

TO-205AF Metal Can

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Reach Compliance Code :

Unknown

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Qualified

Number of Terminations :

3

Published :

1997

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.21.00.95

Operating Mode :

ENHANCEMENT MODE

Series :

Military, MIL-PRF-19500/557

Transistor Element Material :

SILICON

Packaging :

Bulk

Power Dissipation-Max :

800mW Ta 25W Tc

Drain-source On Resistance-Max :

0.18ohm

Terminal Form :

Wire

Transistor Application :

SWITCHING

Turn On Time-Max (ton) :

105ns

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Number of Pins :

3

FET Type :

N-Channel

Turn Off Time-Max (toff) :

85ns

Continuous Drain Current (ID) :

8A

Case Connection :

DRAIN

Reference Standard :

MIL-19500

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

2

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

100V