JAN2N6790U
- Mfr.Part #
- JAN2N6790U
- Manufacturer
- Microsemi
- Package / Case
- 18-CLCC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 2.8A 18ULCC
- Stock
- 3,151
- In Stock :
- 3,151
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 15
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 14.3nC @ 10V
- Continuous Drain Current (ID) :
- 2.8A
- Pin Count :
- 18/15
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Military, MIL-PRF-19500/555
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 3.5A, 10V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-CQCC-N15
- Power Dissipation-Max :
- 800mW Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Additional Feature :
- HIGH RELIABILTY
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 11A
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.85Ohm
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Number of Elements :
- 1
- Case Connection :
- SOURCE
- Terminal Position :
- QUAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 18-CLCC
- DS Breakdown Voltage-Min :
- 200V
- Mounting Type :
- Surface Mount
- Terminal Form :
- NO LEAD
- ECCN Code :
- EAR99
- Published :
- 1997
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Reference Standard :
- MIL-19500
- Vgs (Max) :
- ±20V
- Datasheets
- JAN2N6790U
N-Channel Bulk 850m Ω @ 3.5A, 10V ±20V 14.3nC @ 10V 200V 18-CLCC
JAN2N6790U Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 3.5A.There is a peak drain current of 11A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JAN2N6790U Features
a continuous drain current (ID) of 2.8A
based on its rated peak drain current 11A.
a 200V drain to source voltage (Vdss)
JAN2N6790U Applications
There are a lot of Microsemi Corporation
JAN2N6790U applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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