JAN2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

200V

Series :

Military, MIL-PRF-19500/555

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

JESD-609 Code :

e0

Reference Standard :

MIL-19500

Continuous Drain Current (ID) :

3.5A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-205AF Metal Can

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

Published :

1997

JESD-30 Code :

O-MBCY-W3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Qualified

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Turn Off Time-Max (toff) :

100ns

Drain-source On Resistance-Max :

0.8Ohm

Transistor Element Material :

SILICON

Power Dissipation-Max :

800mW Tc

Turn On Time-Max (ton) :

90ns

Packaging :

Bulk

ECCN Code :

EAR99

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

14A

Terminal Form :

Wire

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.5A, 10V

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)