JAN2N6788

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

24A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V

Packaging :

Bulk

ECCN Code :

EAR99

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

6A

JESD-609 Code :

e0

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Wire

Mounting Type :

Through Hole

Rise Time :

70ns

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Qualified

FET Type :

N-Channel

Vgs (Max) :

±20V

Series :

Military, MIL-PRF-19500/555

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

40 ns

Reference Standard :

MIL-19500

Turn On Delay Time :

40 ns

Transistor Element Material :

SILICON

Package / Case :

TO-205AF Metal Can

Fall Time (Typ) :

70 ns

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Power Dissipation-Max :

800mW Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM