JAN2N6782

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-205AF Metal Can

Mounting Type :

Through Hole

Turn Off Time-Max (toff) :

45ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

14A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

610m Ω @ 3.5A, 10V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Series :

Military, MIL-PRF-19500/556

Terminal Finish :

Tin/Lead (Sn/Pb)

Pbfree Code :

No

Number of Terminations :

3

Drain-source On Resistance-Max :

0.6Ohm

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Power Dissipation-Max :

800mW Ta 15W Tc

Continuous Drain Current (ID) :

3.5A

Reference Standard :

MIL-19500

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Number of Elements :

1

Transistor Element Material :

SILICON

Qualification Status :

Qualified

Turn On Time-Max (ton) :

40ns

FET Type :

N-Channel

Vgs (Max) :

±20V

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)