JAN2N6766T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

4W Ta 150W Tc

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Terminal Finish :

TIN LEAD

Pbfree Code :

No

Packaging :

Bulk

Case Connection :

Isolated

Qualification Status :

Qualified

Continuous Drain Current (ID) :

30A

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.065Ohm

Vgs (Max) :

±20V

Radiation Hardening :

No

Terminal Position :

Single

Terminal Form :

PIN/PEG

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Published :

1997

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

ECCN Code :

EAR99

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Series :

Military, MIL-PRF-19500/543

Number of Pins :

3