JAN2N6766

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

2

Series :

Military, MIL-PRF-19500/543

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-204AE

Drain-source On Resistance-Max :

0.085Ohm

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

500 mJ

Mounting Type :

Through Hole

Number of Pins :

3

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

DS Breakdown Voltage-Min :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

Published :

1997

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Mount :

Through Hole

Number of Terminations :

2

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Qualification Status :

Qualified

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

O-MBFM-P2

Terminal Finish :

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-609 Code :

e0

Vgs (Max) :

±20V

Contact Plating :

Lead, Tin

Terminal Form :

PIN/PEG

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

4W Ta 150W Tc

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

120A