JAN2N6764

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

4W Ta 150W Tc

Mounting Type :

Through Hole

Number of Elements :

1

Case Connection :

DRAIN

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

38A Tc

FET Type :

N-Channel

Terminal Position :

BOTTOM

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-204AE

Rise Time :

190ns

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

152A

Terminal Form :

PIN/PEG

Number of Terminations :

2

JESD-30 Code :

O-MBFM-P2

Avalanche Energy Rating (Eas) :

150 mJ

Continuous Drain Current (ID) :

38A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1997

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Qualification Status :

Qualified

Pin Count :

2

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Series :

Military, MIL-PRF-19500/543

Drain-source On Resistance-Max :

0.055Ohm

Rds On (Max) @ Id, Vgs :

65m Ω @ 38A, 10V