JAN2N3700
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- Mfr.Part #
- JAN2N3700
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO18
- Stock
- 206
- In Stock ：
- 206
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Published :
- 2007
- Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- JESD-609 Code :
- e0
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- Current - Collector Cutoff (Max) :
- 10nA
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Military, MIL-PRF-19500/391
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Wire
- Datasheets
- JAN2N3700
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JAN2N3700 Applications
There are a lot of Microsemi Corporation
JAN2N3700 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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