IXTR30N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Height :

21.34 mm

Terminal Form :

THROUGH-HOLE

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Element Configuration :

Single

Number of Pins :

3

Base Product Number :

IXTR30

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1000 mJ

Package :

Tube

Package / Case :

ISOPLUS247™

Width :

5.21 mm

RoHS :

Details

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

250V

Terminal Position :

Single

FET Feature :

-

Mount :

Through Hole

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

25A Tc

DS Breakdown Voltage-Min :

250 V

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

120A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

-

Brand :

IXYS

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

25A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

0.075Ohm

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Rise Time :

19ns

Turn-Off Delay Time :

79 ns

Case Connection :

Isolated

Power Dissipation-Max :

150W Tc

Pin Count :

3

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Power Dissipation (Max) :

150W (Tc)

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Product Category :

MOSFET

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Fall Time (Typ) :

17 ns

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Surface Mount :

No

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

75m Ω @ 15A, 10V

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Transistor Polarity :

N-Channel

Published :

2001

Number of Terminations :

3

Subcategory :

MOSFETs

Length :

16.13 mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

150W

Supplier Device Package :

ISOPLUS247™

Gate to Source Voltage (Vgs) :

20V