IXTR120P20T
- Mfr.Part #
- IXTR120P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 90A ISOPLUS247
- Stock
- 11,626
- In Stock :
- 11,626
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Continuous Drain Current (ID) :
- 90A
- Power Dissipation-Max :
- 595W Tc
- Power Dissipation-Max (Abs) :
- 595 W
- Pin Count :
- 3
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.032Ohm
- RoHS :
- Details
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 595W (Tc)
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Polarity/Channel Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTR120
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 90 A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Transistor Polarity :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 28 Weeks
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- FET Type :
- P-Channel
- Series :
- TrenchP™
- Packaging :
- Tube
- Number of Terminals :
- 3
- Package :
- Tube
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Vgs (Max) :
- ±15V
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- ISOPLUS247™
- JESD-30 Code :
- R-PSIP-T3
- DS Breakdown Voltage-Min :
- 200V
- Drain to Source Voltage (Vdss) :
- 200V
- Published :
- 2012
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 400A
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 60A, 10V
- Datasheets
- IXTR120P20T
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P-Channel Tube 32m Ω @ 60A, 10V ±15V 73000pF @ 25V 740nC @ 10V 200V TO-247-3
IXTR120P20T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 73000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.90 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 400A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTR120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTR120P20T Applications
There are a lot of IXYS
IXTR120P20T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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