IXTQ96N25T
- Mfr.Part #
- IXTQ96N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 96A TO3P
- Stock
- 1,010
- In Stock :
- 1,010
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Subcategory :
- MOSFETs
- RoHS :
- Details
- Number of Elements :
- 1
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Length :
- 15.8 mm
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 59 ns
- Pulsed Drain Current-Max (IDM) :
- 250A
- Published :
- 2007
- Additional Feature :
- AVALANCHE RATED
- Width :
- 4.9 mm
- FET Type :
- N-Channel
- Series :
- TrenchHV™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 625W (Tc)
- Supplier Device Package :
- TO-3P
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 500mA, 10V
- Rise Time :
- 22ns
- Package :
- Tube
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 250V
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 28 ns
- Surface Mount :
- No
- Power Dissipation-Max :
- 625W Tc
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- DS Breakdown Voltage-Min :
- 250 V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 96A
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Package / Case :
- TO-3P-3, SC-65-3
- Base Product Number :
- IXTQ96
- Power Dissipation :
- 625W
- Product Type :
- MOSFET
- Terminal Finish :
- PURE TIN
- Drain-source On Resistance-Max :
- 0.029Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6100pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTQ96N25T

N-Channel Tube 29m Ω @ 500mA, 10V ±30V 6100pF @ 25V 114nC @ 10V 250V TO-3P-3, SC-65-3
IXTQ96N25T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 96A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 59 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 250A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250 V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTQ96N25T Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 59 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXTQ96N25T Applications
There are a lot of IXYS
IXTQ96N25T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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