IXTQ14N60P
- Mfr.Part #
- IXTQ14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO3P
- Stock
- 279
- In Stock :
- 279
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Pin Count :
- 3
- Width :
- 4.9 mm
- Channel Mode :
- Enhancement
- Tradename :
- PolarHV
- Polarity/Channel Type :
- P-Channel
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 600V
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Package / Case :
- TO-3P-3, SC-65-3
- Type :
- PolarHV Power MOSFET
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 600V
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Manufacturer :
- IXYS
- FET Feature :
- --
- Packaging :
- Tube
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- DRAIN
- Power Dissipation :
- 300W
- Pulsed Drain Current-Max (IDM) :
- 42A
- Surface Mount :
- No
- Base Product Number :
- IXTQ14
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Series :
- PolarHV™
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 14 A
- Drain-source On Resistance-Max :
- 0.55Ohm
- Lead Free :
- Lead Free
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- Fall Time (Typ) :
- 26 ns
- Supplier Device Package :
- TO-3P
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 27ns
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 300 W
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Height :
- 20.3 mm
- DS Breakdown Voltage-Min :
- 600 V
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Length :
- 15.8 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 14A
- Number of Terminations :
- 3
- Current Rating :
- 14A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 24 Weeks
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Datasheets
- IXTQ14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ14N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTQ14N60P Applications
There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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