IXTQ14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

900 mJ

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

14 A

Supplier Device Package :

TO-3P

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-3P-3, SC-65-3

Package Shape :

RECTANGULAR

Fall Time (Typ) :

26 ns

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Pin Count :

3

Factory Lead Time :

24 Weeks

Rise Time :

27ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

300 W

Number of Pins :

3

Product Status :

Active

Power Dissipation :

300W

Transistor Type :

1 N-Channel

Surface Mount :

No

Series :

PolarHV™

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Width :

4.9 mm

Tradename :

PolarHV

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

FET Feature :

--

Power Dissipation (Max) :

300W (Tc)

FET Type :

N-Channel

RoHS :

Details

Brand :

IXYS

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Turn-Off Delay Time :

70 ns

DS Breakdown Voltage-Min :

600 V

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Mounting Style :

Through Hole

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

14A

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Current Rating :

14A

Case Connection :

DRAIN

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

PolarHV Power MOSFET

Pulsed Drain Current-Max (IDM) :

42A

Drain-source On Resistance-Max :

0.55Ohm

Height :

20.3 mm

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

600V

Base Product Number :

IXTQ14

Polarity/Channel Type :

P-Channel

Mount :

Through Hole

Published :

2006

Length :

15.8 mm

JESD-609 Code :

e3

Power Dissipation-Max :

300W Tc

Drain to Source Breakdown Voltage :

600V

Configuration :

Single