IXTQ14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXTQ14

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Power Dissipation :

300W

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

300W (Tc)

Terminal Position :

Single

Length :

15.8 mm

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Type :

PolarHV Power MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PolarHV™

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

300 W

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

600V

Supplier Device Package :

TO-3P

Factory Lead Time :

24 Weeks

Avalanche Energy Rating (Eas) :

900 mJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

RoHS :

Details

FET Feature :

--

Qualification Status :

Not Qualified

Width :

4.9 mm

Number of Elements :

1

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Tradename :

PolarHV

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Brand :

IXYS

Pin Count :

3

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Package :

Tube

Pulsed Drain Current-Max (IDM) :

42A

Polarity/Channel Type :

P-Channel

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Surface Mount :

No

Channel Mode :

Enhancement

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Continuous Drain Current (ID) :

14A

Power Dissipation-Max :

300W Tc

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600V

Rise Time :

27ns

Number of Channels :

1 Channel

Fall Time (Typ) :

26 ns

Configuration :

Single

Height :

20.3 mm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Case Connection :

DRAIN

Current Rating :

14A

Manufacturer :

IXYS

Turn-Off Delay Time :

70 ns

DS Breakdown Voltage-Min :

600 V

Package / Case :

TO-3P-3, SC-65-3

Drain-source On Resistance-Max :

0.55Ohm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

14 A