IXTQ14N60P

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Mfr.Part #
IXTQ14N60P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO3P
Stock
279
In Stock :
279

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXTQ14
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Pbfree Code :
yes
Power Dissipation :
300W
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
300W (Tc)
Terminal Position :
Single
Length :
15.8 mm
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Type :
PolarHV Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
PolarHV™
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
300 W
Gate to Source Voltage (Vgs) :
30V
Voltage - Rated DC :
600V
Supplier Device Package :
TO-3P
Factory Lead Time :
24 Weeks
Avalanche Energy Rating (Eas) :
900 mJ
FET Type :
N-Channel
Transistor Application :
SWITCHING
RoHS :
Details
FET Feature :
--
Qualification Status :
Not Qualified
Width :
4.9 mm
Number of Elements :
1
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Tradename :
PolarHV
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Brand :
IXYS
Pin Count :
3
Drain to Source Breakdown Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2006
Package :
Tube
Pulsed Drain Current-Max (IDM) :
42A
Polarity/Channel Type :
P-Channel
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Surface Mount :
No
Channel Mode :
Enhancement
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Continuous Drain Current (ID) :
14A
Power Dissipation-Max :
300W Tc
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
600V
Rise Time :
27ns
Number of Channels :
1 Channel
Fall Time (Typ) :
26 ns
Configuration :
Single
Height :
20.3 mm
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Case Connection :
DRAIN
Current Rating :
14A
Manufacturer :
IXYS
Turn-Off Delay Time :
70 ns
DS Breakdown Voltage-Min :
600 V
Package / Case :
TO-3P-3, SC-65-3
Drain-source On Resistance-Max :
0.55Ohm
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
14 A
Datasheets
IXTQ14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Type:PolarHV Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-3P-3, SC-65-3, IXTQ14N60P pinout, IXTQ14N60P datasheet PDF, IXTQ14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3

IXTQ14N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTQ14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXTQ14N60P Applications


There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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