IXTQ110N055P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

RoHS :

Compliant

FET Feature :

--

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0135 Ω

Surface Mount :

No

Fall Time (Typ) :

45 ns

Pulsed Drain Current-Max (IDM) :

250A

JESD-30 Code :

R-PSFM-T3

Published :

2006

Rds On Max :

13.5 mΩ

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation :

390W

DS Breakdown Voltage-Min :

55 V

Terminal Position :

Single

Min Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Number of Terminals :

3

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Turn-On Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Height :

20.3mm

JESD-609 Code :

e3

Max Operating Temperature :

175 °C

Series :

PolarHT™

Packaging :

Tube

Element Configuration :

Single

Rise Time :

53ns

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

55V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

66 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Power Dissipation-Max :

390W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

4.9mm

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

55V

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Length :

15.8mm

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

27 ns

Manufacturer :

IXYS Corporation

Continuous Drain Current (ID) :

110A

Supplier Device Package :

TO-3P

Base Product Number :

IXTQ110

Factory Lead Time :

10 Weeks

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

1000 mJ

Max Power Dissipation :

390 W

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

13.5 mΩ

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

2.21 nF

Package :

Tube

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Power Dissipation (Max) :

390W (Tc)