IXTQ100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package :

Tube

Power Dissipation (Max) :

600W (Tc)

Number of Pins :

3

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Mounting Style :

Through Hole

Product Category :

MOSFET

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

250V

Drain to Source Resistance :

27 mΩ

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

Resistance :

27mOhm

Packaging :

Tube

Series :

PolarHT™

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

RoHS :

Details

Height :

20.3 mm

Width :

4.9 mm

Manufacturer :

IXYS

Number of Channels :

1 Channel

Length :

15.8 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

PolarHT

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Max Operating Temperature :

150 °C

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

250 V

Transistor Element Material :

SILICON

Min Operating Temperature :

-55 °C

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

250 V

Pulsed Drain Current-Max (IDM) :

250A

Fall Time (Typ) :

28 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Rise Time :

26ns

Reach Compliance Code :

Compliant

MSL :

-

Factory Lead Time :

24 Weeks

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

24m Ω @ 50A, 10V

Product Status :

Active

Published :

2006

Type :

PolarHT Power MOSFET

Package / Case :

TO-3P-3, SC-65-3

Avalanche Energy Rating (Eas) :

2000 mJ

Transistor Polarity :

N-Channel

Qualification :

-

Power Dissipation-Max :

600W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Continuous Drain Current (ID) :

100A

Rds On Max :

24 mΩ

Supplier Device Package :

TO-3P

FET Feature :

-

Pbfree Code :

yes

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Max Power Dissipation :

600 W

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

100 ns

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

600W

Channel Type :

N Channel

Pin Count :

3

Input Capacitance :

6.3 nF

Brand :

IXYS

Transistor Type :

1 N-Channel

Element Configuration :

Single

Continuous Drain Current Id :

100A

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Configuration :

Single

Drain-source On Resistance-Max :

0.027 Ω

Base Product Number :

IXTQ100

Subcategory :

MOSFETs