IXTQ96N15P
- Mfr.Part #
- IXTQ96N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 96A TO3P
- Stock
- 12,221
- In Stock :
- 12,221
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Length :
- 15.8 mm
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Configuration :
- Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 150 V
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 250A
- Power Dissipation-Max :
- 480W Tc
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Width :
- 4.9 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- No
- Rise Time :
- 33ns
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 480W (Tc)
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Base Product Number :
- IXTQ96
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 175 C
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Published :
- 2006
- Height :
- 20.3 mm
- Power Dissipation :
- 480W
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Tradename :
- PolarHT
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Series :
- PolarHT™
- Turn-Off Delay Time :
- 66 ns
- Subcategory :
- MOSFETs
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.024Ohm
- Type :
- PolarHT Power MOSFET
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 18 ns
- Drain to Source Voltage (Vdss) :
- 150V
- Supplier Device Package :
- TO-3P
- Package / Case :
- TO-3P-3, SC-65-3
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 96A
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Number of Terminations :
- 3
- Datasheets
- IXTQ96N15P

N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-3P-3, SC-65-3
IXTQ96N15P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 66 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXTQ96N15P Applications
There are a lot of IXYS
IXTQ96N15P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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