IXTQ96N15P

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Mfr.Part #
IXTQ96N15P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 150V 96A TO3P
Stock
12,221
In Stock :
12,221

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Length :
15.8 mm
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Configuration :
Single
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Package :
Tube
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
150 V
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Package Shape :
RECTANGULAR
Product Status :
Active
Transistor Application :
SWITCHING
RoHS :
Details
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
250A
Power Dissipation-Max :
480W Tc
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
1000 mJ
Width :
4.9 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Mounting Style :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Surface Mount :
No
Rise Time :
33ns
Vgs (Max) :
±20V
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
150V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
480W (Tc)
JESD-609 Code :
e3
Terminal Position :
Single
Base Product Number :
IXTQ96
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 175 C
Manufacturer :
IXYS
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Published :
2006
Height :
20.3 mm
Power Dissipation :
480W
Terminal Finish :
Matte Tin (Sn)
Lead Free :
Lead Free
Tradename :
PolarHT
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Series :
PolarHT™
Turn-Off Delay Time :
66 ns
Subcategory :
MOSFETs
FET Feature :
--
Drain-source On Resistance-Max :
0.024Ohm
Type :
PolarHT Power MOSFET
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Fall Time (Typ) :
18 ns
Drain to Source Voltage (Vdss) :
150V
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
Product Type :
MOSFET
Continuous Drain Current (ID) :
96A
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Mount :
Through Hole
Number of Terminals :
3
Reach Compliance Code :
Compliant
Factory Lead Time :
24 Weeks
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Number of Terminations :
3
Datasheets
IXTQ96N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ96N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Type:PolarHT Power MOSFET, Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, IXTQ96N15P pinout, IXTQ96N15P datasheet PDF, IXTQ96N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ96N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ96N15P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-3P-3, SC-65-3

IXTQ96N15P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 66 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTQ96N15P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXTQ96N15P Applications


There are a lot of IXYS
IXTQ96N15P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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