IXTQ80N28T
- Mfr.Part #
- IXTQ80N28T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 80A TO3P
- Stock
- 12,519
- In Stock :
- 12,519
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 280V
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 500W Tc
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 500W (Tc)
- Supplier Device Package :
- TO-3P
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Series :
- --
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 280V
- Drain-source On Resistance-Max :
- 0.049Ohm
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 240A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Package / Case :
- TO-3P-3, SC-65-3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Product Status :
- Obsolete
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTQ80N28T

N-Channel Tube 49m Ω @ 500mA, 10V ±30V 5000pF @ 25V 115nC @ 10V 280V TO-3P-3, SC-65-3
IXTQ80N28T Overview
A device's maximum input capacitance is 5000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 280V.To operate this transistor, you need to apply a 280V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ80N28T Features
a continuous drain current (ID) of 80A
based on its rated peak drain current 240A.
a 280V drain to source voltage (Vdss)
IXTQ80N28T Applications
There are a lot of IXYS
IXTQ80N28T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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