IXTQ69N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.049Ohm

Lead Free :

Lead Free

Qualification :

-

Supplier Device Package :

TO-3P

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Height :

20.3 mm

Transistor Type :

1 N-Channel

Power Dissipation-Max :

500W Tc

Reach Compliance Code :

Compliant

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

200A

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

27 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

500W

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Terminal Finish :

Pure Tin (Sn)

Continuous Drain Current Id :

69A

Drain to Source Voltage (Vdss) :

300V

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Turn-Off Delay Time :

75 ns

Base Product Number :

IXTQ69

Manufacturer :

IXYS

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

Continuous Drain Current (ID) :

69A

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

Factory Lead Time :

24 Weeks

Pbfree Code :

yes

Package :

Tube

Series :

PolarHT™

Input Capacitance :

4.96 nF

Published :

2006

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

500 W

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Rise Time :

25ns

Element Configuration :

Single

Surface Mount :

No

FET Feature :

--

RoHS :

Details

Number of Terminations :

3

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

300 V

Package / Case :

TO-3P-3, SC-65-3

Length :

15.8 mm

Pin Count :

3

Max Operating Temperature :

150 °C

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Type :

N Channel

Drain to Source Breakdown Voltage :

300V

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Rds On Max :

49 mΩ

Drain to Source Resistance :

49 mΩ

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Width :

4.9 mm

Transistor Polarity :

N-Channel

Number of Terminals :

3

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

69 A

Power Dissipation (Max) :

500W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

4960pF @ 25V

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Max Power Dissipation :

500 W