IXTQ64N25P

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Mfr.Part #
IXTQ64N25P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 64A TO3P
Stock
56,765
In Stock :
56,765

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Pin Count :
3
Case Connection :
DRAIN
Package :
Tube
Manufacturer :
IXYS
Base Product Number :
IXTQ64
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
160A
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Published :
2006
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Product Category :
MOSFET
Mounting Style :
Through Hole
Pbfree Code :
yes
Rise Time :
23ns
Avalanche Energy Rating (Eas) :
1000 mJ
Length :
15.8 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
49m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
3450pF @ 25V
Element Configuration :
Single
Number of Terminations :
3
Series :
PolarHT™
Height :
20.3 mm
DS Breakdown Voltage-Min :
250 V
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Width :
4.9 mm
RoHS :
Details
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Channels :
1 Channel
Number of Elements :
1
Drain to Source Voltage (Vdss) :
250V
Surface Mount :
No
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
20V
Subcategory :
MOSFETs
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
400W
Supplier Device Package :
TO-3P
Factory Lead Time :
24 Weeks
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Number of Terminals :
3
Drain-source On Resistance-Max :
0.049Ohm
Drain to Source Breakdown Voltage :
250V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
20 ns
Turn-Off Delay Time :
60 ns
Terminal Position :
Single
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
Current Rating :
64A
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
64A
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-3P-3, SC-65-3
Product Type :
MOSFET
Packaging :
Tube
Power Dissipation-Max :
400W Tc
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Voltage - Rated DC :
25V
Power Dissipation (Max) :
400W (Tc)
Datasheets
IXTQ64N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ64N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, IXTQ64N25P pinout, IXTQ64N25P datasheet PDF, IXTQ64N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ64N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ64N25P


N-Channel Tube 49m Ω @ 500mA, 10V ±20V 3450pF @ 25V 105nC @ 10V 250V TO-3P-3, SC-65-3

IXTQ64N25P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3450pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 160A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 250 V, it should remain above the 250 V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTQ64N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 160A.
a 250V drain to source voltage (Vdss)


IXTQ64N25P Applications


There are a lot of IXYS
IXTQ64N25P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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