IXTQ64N25P
- Mfr.Part #
- IXTQ64N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 64A TO3P
- Stock
- 56,765
- In Stock :
- 56,765
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Package :
- Tube
- Manufacturer :
- IXYS
- Base Product Number :
- IXTQ64
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 160A
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Published :
- 2006
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Product Category :
- MOSFET
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Rise Time :
- 23ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Length :
- 15.8 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3450pF @ 25V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Series :
- PolarHT™
- Height :
- 20.3 mm
- DS Breakdown Voltage-Min :
- 250 V
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Width :
- 4.9 mm
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 250V
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 20V
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 400W
- Supplier Device Package :
- TO-3P
- Factory Lead Time :
- 24 Weeks
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.049Ohm
- Drain to Source Breakdown Voltage :
- 250V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 20 ns
- Turn-Off Delay Time :
- 60 ns
- Terminal Position :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Current Rating :
- 64A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 64A
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-3P-3, SC-65-3
- Product Type :
- MOSFET
- Packaging :
- Tube
- Power Dissipation-Max :
- 400W Tc
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 25V
- Power Dissipation (Max) :
- 400W (Tc)
- Datasheets
- IXTQ64N25P

N-Channel Tube 49m Ω @ 500mA, 10V ±20V 3450pF @ 25V 105nC @ 10V 250V TO-3P-3, SC-65-3
IXTQ64N25P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3450pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 160A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 250 V, it should remain above the 250 V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ64N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 160A.
a 250V drain to source voltage (Vdss)
IXTQ64N25P Applications
There are a lot of IXYS
IXTQ64N25P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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