IXTQ60N20L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

Single

Case Connection :

DRAIN

Number of Channels :

1 Channel

Mount :

Through Hole

Power Dissipation-Max :

540W Tc

Transistor Application :

AMPLIFIER

Number of Elements :

1

Number of Terminations :

3

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

2000 mJ

Base Product Number :

IXTQ60

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Pure Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Power Dissipation (Max) :

540W (Tc)

Pulsed Drain Current-Max (IDM) :

150A

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Style :

Through Hole

ECCN Code :

EAR99

Pbfree Code :

yes

Product Category :

MOSFET

Continuous Drain Current (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Published :

2009

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Through Hole

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

60 A

Power Dissipation-Max (Abs) :

540 W

Packaging :

Tube

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

Linear L2™

Supplier Device Package :

TO-3P

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Surface Mount :

No

Drain-source On Resistance-Max :

0.045Ohm

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

90 ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 30A, 10V

Package / Case :

TO-3P-3, SC-65-3

Configuration :

Single

RoHS :

Details

Qualification Status :

Not Qualified

Power Dissipation :

540W

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

24 Weeks

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Package :

Tube

DS Breakdown Voltage-Min :

200 V

FET Type :

N-Channel

Manufacturer :

IXYS

Product Status :

Active

Polarity/Channel Type :

N-Channel