IXTQ52P10P

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Mfr.Part #
IXTQ52P10P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET P-CH 100V 52A TO3P
Stock
23,101
In Stock :
23,101

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Length :
15.8 mm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Power Dissipation :
300W
Maximum Operating Temperature :
+ 150 C
Factory Lead Time :
24 Weeks
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
300 W
Number of Elements :
1
Min Operating Temperature :
-55 °C
Transistor Application :
SWITCHING
Transistor Polarity :
P-Channel
Drain-source On Resistance-Max :
0.05 Ω
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Number of Terminations :
3
FET Type :
P-Channel
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Fall Time (Typ) :
22 ns
Height :
20.1 mm
Package Shape :
RECTANGULAR
Series :
PolarP™
Terminal Form :
THROUGH-HOLE
RoHS :
Compliant
JESD-609 Code :
e3
Element Configuration :
Single
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
100V
Power Dissipation (Max) :
300W (Tc)
Tradename :
PolarP
Power Dissipation-Max :
300W Tc
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
150 °C
Input Capacitance :
2.845 nF
Mounting Style :
Through Hole
Width :
4.9 mm
Lead Free :
Lead Free
Product Category :
MOSFET
Turn-Off Delay Time :
38 ns
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Transistor Type :
1 P-Channel
Terminal Finish :
PURE TIN
Base Product Number :
IXTQ52
Brand :
IXYS
Rise Time :
29ns
Transistor Element Material :
SILICON
Polarity/Channel Type :
P-Channel
Product Status :
Active
ECCN Code :
EAR99
FET Feature :
--
Type :
PolarP Power MOSFET
Pin Count :
3
Published :
2008
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-3P-3, SC-65-3
Drain to Source Breakdown Voltage :
-100V
Channel Mode :
Enhancement
Manufacturer :
IXYS
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
130 A
Resistance :
50mOhm
Vgs (Max) :
±20V
Number of Pins :
3
Drain to Source Resistance :
50 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1500 mJ
Rds On Max :
50 mΩ
Configuration :
Single
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
100 V
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2845pF @ 25V
Power Dissipation-Max (Abs) :
300 W
Continuous Drain Current (ID) :
52A
Reach Compliance Code :
Unknown
Supplier Device Package :
TO-3P
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
52 A
Datasheets
IXTQ52P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ52P10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:PolarP Power MOSFET, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Mounting Type:Through Hole, IXTQ52P10P pinout, IXTQ52P10P datasheet PDF, IXTQ52P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ52P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ52P10P


P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-3P-3, SC-65-3

IXTQ52P10P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2845pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 52A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.A device can conduct a maximum continuous current of [52 A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 130 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 50 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTQ52P10P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130 A.
single MOSFETs transistor is 50 mΩ
a 100V drain to source voltage (Vdss)


IXTQ52P10P Applications


There are a lot of IXYS
IXTQ52P10P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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