IXTQ470P2

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Mfr.Part #
IXTQ470P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 42A TO3P
Stock
13,494
In Stock :
13,494

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXTQ470
Drain Current-Max (Abs) (ID) :
42 A
Number of Elements :
1
FET Type :
N-Channel
Product Category :
MOSFET
Transistor Element Material :
SILICON
Number of Terminals :
3
Continuous Drain Current (ID) :
42A
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Power Dissipation-Max (Abs) :
830 W
JESD-30 Code :
R-PSFM-T3
Type :
PolarP2 Power MOSFET
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Terminal Finish :
Pure Tin (Sn)
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Series :
PolarP2™
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Pbfree Code :
yes
Tradename :
Polar2 HiPerFET
Product Type :
MOSFET
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
500 V
Avalanche Energy Rating (Eas) :
1300 mJ
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Brand :
IXYS
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-3P
Drain to Source Breakdown Voltage :
500V
FET Feature :
--
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
Power Dissipation :
830W
Drain-source On Resistance-Max :
0.145Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Power Dissipation (Max) :
830W (Tc)
RoHS :
Details
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
24 Weeks
Transistor Polarity :
N-Channel
Published :
2010
Pulsed Drain Current-Max (IDM) :
126A
Maximum Operating Temperature :
+ 150 C
Package :
Tube
Power Dissipation-Max :
830W Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Type:PolarP2 Power MOSFET, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, IXTQ470P2 pinout, IXTQ470P2 datasheet PDF, IXTQ470P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ470P2


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5400pF @ 25V 88nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ470P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ470P2 Features


the avalanche energy rating (Eas) is 1300 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
a 500V drain to source voltage (Vdss)


IXTQ470P2 Applications


There are a lot of IXYS
IXTQ470P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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