IXTQ470P2
- Mfr.Part #
- IXTQ470P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 42A TO3P
- Stock
- 13,494
- In Stock :
- 13,494
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTQ470
- Drain Current-Max (Abs) (ID) :
- 42 A
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 42A
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation-Max (Abs) :
- 830 W
- JESD-30 Code :
- R-PSFM-T3
- Type :
- PolarP2 Power MOSFET
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Terminal Finish :
- Pure Tin (Sn)
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- Series :
- PolarP2™
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Tradename :
- Polar2 HiPerFET
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 500 V
- Avalanche Energy Rating (Eas) :
- 1300 mJ
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-3P
- Drain to Source Breakdown Voltage :
- 500V
- FET Feature :
- --
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 145m Ω @ 500mA, 10V
- Power Dissipation :
- 830W
- Drain-source On Resistance-Max :
- 0.145Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Power Dissipation (Max) :
- 830W (Tc)
- RoHS :
- Details
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 24 Weeks
- Transistor Polarity :
- N-Channel
- Published :
- 2010
- Pulsed Drain Current-Max (IDM) :
- 126A
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Power Dissipation-Max :
- 830W Tc
- Datasheets
- IXTQ470P2
IXTQ470P2 Documents

N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5400pF @ 25V 88nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ470P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ470P2 Features
the avalanche energy rating (Eas) is 1300 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
a 500V drain to source voltage (Vdss)
IXTQ470P2 Applications
There are a lot of IXYS
IXTQ470P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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