IXTQ470P2

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Mfr.Part #
IXTQ470P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 42A TO3P
Stock
13,494
In Stock :
13,494

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Product Type :
MOSFET
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
126A
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSFM-T3
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-3P-3, SC-65-3
Drain Current-Max (Abs) (ID) :
42 A
Manufacturer :
IXYS
Power Dissipation-Max :
830W Tc
Transistor Element Material :
SILICON
Factory Lead Time :
24 Weeks
Continuous Drain Current (ID) :
42A
Published :
2010
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Number of Terminations :
3
Tradename :
Polar2 HiPerFET
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Packaging :
Tube
Terminal Finish :
Pure Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Power Dissipation (Max) :
830W (Tc)
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Drain-source On Resistance-Max :
0.145Ohm
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Element Configuration :
Single
Package :
Tube
Vgs (Max) :
±30V
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Type :
PolarP2 Power MOSFET
Pin Count :
3
Power Dissipation-Max (Abs) :
830 W
Number of Terminals :
3
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
500 V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Product Status :
Active
Power Dissipation :
830W
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Supplier Device Package :
TO-3P
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
Drain to Source Voltage (Vdss) :
500V
Avalanche Energy Rating (Eas) :
1300 mJ
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
RoHS :
Details
Configuration :
Single
Qualification Status :
Not Qualified
Brand :
IXYS
Maximum Operating Temperature :
+ 150 C
Series :
PolarP2™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTQ470
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Datasheets
IXTQ470P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Type:PolarP2 Power MOSFET, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTQ470P2 pinout, IXTQ470P2 datasheet PDF, IXTQ470P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ470P2


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5400pF @ 25V 88nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ470P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ470P2 Features


the avalanche energy rating (Eas) is 1300 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
a 500V drain to source voltage (Vdss)


IXTQ470P2 Applications


There are a lot of IXYS
IXTQ470P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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