IXTQ450P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXTQ450

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

16 A

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

330m Ω @ 8A, 10V

Reach Compliance Code :

Unknown

Number of Terminations :

3

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Product Status :

Active

JESD-609 Code :

e3

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

35A

Terminal Position :

Single

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSFM-T3

Type :

PolarP2 Power MOSFET

Surface Mount :

No

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

500V

Transistor Type :

1 N-Channel

Power Dissipation :

300W

Power Dissipation-Max (Abs) :

300 W

Minimum Operating Temperature :

- 55 C

Tradename :

Polar2 HiPerFET

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

DS Breakdown Voltage-Min :

500 V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Series :

PolarP2™

Terminal Finish :

PURE TIN

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Transistor Application :

SWITCHING

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

500V

Product Category :

MOSFET

Number of Elements :

1

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

750 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.33Ohm

Power Dissipation (Max) :

300W (Tc)

Supplier Device Package :

TO-3P

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Mount :

Through Hole

Continuous Drain Current (ID) :

16A

FET Feature :

--

Factory Lead Time :

24 Weeks

Power Dissipation-Max :

300W Tc

Pbfree Code :

yes