IXTQ42N25P

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Mfr.Part #
IXTQ42N25P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO3P
Stock
56
In Stock :
56

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.084Ohm
Configuration :
Single
Power Dissipation (Max) :
300W (Tc)
Mounting Style :
Through Hole
RoHS :
Details
Height :
20.3 mm
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
110A
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Length :
15.8 mm
DS Breakdown Voltage-Min :
250 V
Manufacturer :
IXYS
JESD-609 Code :
e3
Width :
4.9 mm
Drain to Source Breakdown Voltage :
250V
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Rise Time :
28ns
Package / Case :
TO-3P-3, SC-65-3
Brand :
IXYS
Turn-Off Delay Time :
81 ns
Factory Lead Time :
24 Weeks
Subcategory :
MOSFETs
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
42A
Mounting Type :
Through Hole
Type :
PolarHT Power MOSFET
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Series :
PolarHT™
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Avalanche Energy Rating (Eas) :
1000 mJ
Terminal Position :
Single
Transistor Application :
SWITCHING
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
250V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Supplier Device Package :
TO-3P
Fall Time (Typ) :
30 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Pin Count :
3
Transistor Polarity :
N-Channel
Tradename :
PolarHT
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSFM-T3
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
300W Tc
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXTQ42
FET Feature :
--
Number of Terminals :
3
Mount :
Through Hole
Product Category :
MOSFET
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Packaging :
Tube
Power Dissipation :
300W
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Number of Terminations :
3
Number of Elements :
1
Datasheets
IXTQ42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ42N25P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Type:PolarHT Power MOSFET, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, IXTQ42N25P pinout, IXTQ42N25P datasheet PDF, IXTQ42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-3P-3, SC-65-3

IXTQ42N25P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2300pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 81 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTQ42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)


IXTQ42N25P Applications


There are a lot of IXYS
IXTQ42N25P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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