IXTQ42N25P
- Mfr.Part #
- IXTQ42N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 42A TO3P
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.084Ohm
- Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Style :
- Through Hole
- RoHS :
- Details
- Height :
- 20.3 mm
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 110A
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 500mA, 10V
- Length :
- 15.8 mm
- DS Breakdown Voltage-Min :
- 250 V
- Manufacturer :
- IXYS
- JESD-609 Code :
- e3
- Width :
- 4.9 mm
- Drain to Source Breakdown Voltage :
- 250V
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Rise Time :
- 28ns
- Package / Case :
- TO-3P-3, SC-65-3
- Brand :
- IXYS
- Turn-Off Delay Time :
- 81 ns
- Factory Lead Time :
- 24 Weeks
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 42A
- Mounting Type :
- Through Hole
- Type :
- PolarHT Power MOSFET
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Series :
- PolarHT™
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 250V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Supplier Device Package :
- TO-3P
- Fall Time (Typ) :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Tradename :
- PolarHT
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSFM-T3
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 300W Tc
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXTQ42
- FET Feature :
- --
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Power Dissipation :
- 300W
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Datasheets
- IXTQ42N25P

N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-3P-3, SC-65-3
IXTQ42N25P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2300pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 81 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTQ42N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)
IXTQ42N25P Applications
There are a lot of IXYS
IXTQ42N25P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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