IXTQ36P15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Max Operating Temperature :

150 °C

Height :

20.3 mm

RoHS :

Compliant

Max Power Dissipation :

300 W

Power Dissipation (Max) :

300W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.8 mm

Package :

Tube

Mount :

Through Hole

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

36 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

1500 mJ

Min Operating Temperature :

-55 °C

Power Dissipation :

300W

Terminal Position :

Single

Configuration :

Single

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Case Connection :

DRAIN

Turn-Off Delay Time :

36 ns

Terminal Finish :

PURE TIN

Number of Pins :

3

Series :

PolarP™

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

-150V

Number of Terminations :

3

FET Type :

P-Channel

Transistor Type :

1 P-Channel

Polarity/Channel Type :

P-Channel

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

110m Ω @ 18A, 10V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Channel Mode :

Enhancement

Drain to Source Resistance :

110 mΩ

Pulsed Drain Current-Max (IDM) :

90A

Element Configuration :

Single

Base Product Number :

IXTQ36

Transistor Polarity :

P-Channel

Rise Time :

31ns

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Pin Count :

3

Input Capacitance :

3.1 nF

Rds On Max :

110 mΩ

DS Breakdown Voltage-Min :

150 V

Published :

2009

Fall Time (Typ) :

15 ns

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

36A Tc

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Lead Free :

Lead Free

Supplier Device Package :

TO-3P

FET Feature :

--

Width :

4.9 mm

Drain to Source Voltage (Vdss) :

150V

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain-source On Resistance-Max :

0.11Ohm

Manufacturer :

IXYS

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

300W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

300 W

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Continuous Drain Current (ID) :

36A

Factory Lead Time :

24 Weeks

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED