IXTQ36N50P
- Mfr.Part #
- IXTQ36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO3P
- Stock
- 71
- In Stock :
- 71
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 170mOhm
- Factory Lead Time :
- 5 Weeks
- Maximum Operating Temperature :
- + 150 C
- Height :
- 20.3 mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation :
- 540W
- Continuous Drain Current (ID) :
- 36A
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Pin Count :
- 3
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 500 V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Tradename :
- PolarHV
- Drain-source On Resistance-Max :
- 0.17 Ω
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Polarity :
- N-Channel
- Length :
- 15.8 mm
- Fall Time (Typ) :
- 21 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 540W Tc
- Base Product Number :
- IXTQ36
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-3P
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation (Max) :
- 540W (Tc)
- Rise Time :
- 27ns
- Width :
- 4.9 mm
- Brand :
- IXYS
- FET Type :
- N-Channel
- Type :
- PolarHV Power MOSFET
- Surface Mount :
- No
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 108A
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Series :
- PolarHV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Current Rating :
- 36A
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 500V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Datasheets
- IXTQ36N50P

N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ36N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 108A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)
IXTQ36N50P Applications
There are a lot of IXYS
IXTQ36N50P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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