IXTQ36N50P

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Mfr.Part #
IXTQ36N50P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO3P
Stock
71
In Stock :
71

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
170mOhm
Factory Lead Time :
5 Weeks
Maximum Operating Temperature :
+ 150 C
Height :
20.3 mm
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Published :
2006
Vgs(th) (Max) @ Id :
5V @ 250μA
Turn-Off Delay Time :
75 ns
Power Dissipation :
540W
Continuous Drain Current (ID) :
36A
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Pin Count :
3
Mount :
Through Hole
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Product Status :
Active
Transistor Application :
SWITCHING
Packaging :
Tube
Tradename :
PolarHV
Drain-source On Resistance-Max :
0.17 Ω
Drain to Source Breakdown Voltage :
500V
Package / Case :
TO-3P-3, SC-65-3
Transistor Polarity :
N-Channel
Length :
15.8 mm
Fall Time (Typ) :
21 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
540W Tc
Base Product Number :
IXTQ36
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-3P
Product Category :
MOSFET
Channel Mode :
Enhancement
Pbfree Code :
yes
Number of Pins :
3
Qualification Status :
Not Qualified
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
500V
Power Dissipation (Max) :
540W (Tc)
Rise Time :
27ns
Width :
4.9 mm
Brand :
IXYS
FET Type :
N-Channel
Type :
PolarHV Power MOSFET
Surface Mount :
No
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
108A
RoHS :
Details
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Series :
PolarHV™
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Current Rating :
36A
Number of Channels :
1 Channel
Product Type :
MOSFET
Subcategory :
MOSFETs
Terminal Finish :
Matte Tin (Sn)
Voltage - Rated DC :
500V
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Manufacturer :
IXYS
Datasheets
IXTQ36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, IXTQ36N50P pinout, IXTQ36N50P datasheet PDF, IXTQ36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ36N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 108A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTQ36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)


IXTQ36N50P Applications


There are a lot of IXYS
IXTQ36N50P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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