IXTQ32P20T
- Mfr.Part #
- IXTQ32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO3P
- Stock
- 27,905
- In Stock :
- 27,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 96A
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Supplier Device Package :
- TO-3P
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Type :
- 1 P-Channel
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±15V
- Package / Case :
- TO-3P-3, SC-65-3
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.13Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Power Dissipation-Max :
- 300W Tc
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTQ32
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Factory Lead Time :
- 24 Weeks
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- FET Type :
- P-Channel
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- TrenchP™
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- DS Breakdown Voltage-Min :
- 200V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- RoHS :
- Details
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 32A
- FET Feature :
- -
- Product Category :
- MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IXTQ32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-3P-3, SC-65-3
IXTQ32P20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 14500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTQ32P20T Applications
There are a lot of IXYS
IXTQ32P20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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