IXTQ30N60P
- Mfr.Part #
- IXTQ30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO3P
- Stock
- 3,451
- In Stock :
- 3,451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 80A
- Number of Pins :
- 3
- Supplier Device Package :
- TO-3P
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 540W (Tc)
- Continuous Drain Current (ID) :
- 30A
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 24 Weeks
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-3P-3, SC-65-3
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.24Ohm
- Packaging :
- Tube
- Power Dissipation :
- 540W
- Power Dissipation-Max :
- 540W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Base Product Number :
- IXTQ30
- DS Breakdown Voltage-Min :
- 600 V
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 80 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Package :
- Tube
- JESD-609 Code :
- e3
- FET Feature :
- --
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 30A
- Brand :
- IXYS
- Pin Count :
- 3
- Fall Time (Typ) :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.9 mm
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Height :
- 20.3 mm
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Published :
- 2006
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Length :
- 15.8 mm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Surface Mount :
- No
- Series :
- PolarHV™
- Rise Time :
- 20ns
- Datasheets
- IXTQ30N60P

N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ30N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 5050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTQ30N60P Applications
There are a lot of IXYS
IXTQ30N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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