IXTQ30N60P

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Mfr.Part #
IXTQ30N60P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO3P
Stock
3,451
In Stock :
3,451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
80A
Number of Pins :
3
Supplier Device Package :
TO-3P
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
540W (Tc)
Continuous Drain Current (ID) :
30A
Drain to Source Voltage (Vdss) :
600V
Factory Lead Time :
24 Weeks
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Application :
SWITCHING
Package / Case :
TO-3P-3, SC-65-3
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.24Ohm
Packaging :
Tube
Power Dissipation :
540W
Power Dissipation-Max :
540W Tc
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Mount :
Through Hole
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Vgs (Max) :
±30V
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Transistor Element Material :
SILICON
Voltage - Rated DC :
600V
Base Product Number :
IXTQ30
DS Breakdown Voltage-Min :
600 V
Product Category :
MOSFET
Turn-Off Delay Time :
80 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Package :
Tube
JESD-609 Code :
e3
FET Feature :
--
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current Rating :
30A
Brand :
IXYS
Pin Count :
3
Fall Time (Typ) :
25 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Width :
4.9 mm
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Subcategory :
MOSFETs
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
30V
Qualification Status :
Not Qualified
Height :
20.3 mm
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Product Status :
Active
Channel Mode :
Enhancement
Published :
2006
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Length :
15.8 mm
Avalanche Energy Rating (Eas) :
1500 mJ
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Surface Mount :
No
Series :
PolarHV™
Rise Time :
20ns
Datasheets
IXTQ30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ30N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTQ30N60P pinout, IXTQ30N60P datasheet PDF, IXTQ30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-3P-3, SC-65-3

IXTQ30N60P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 5050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTQ30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTQ30N60P Applications


There are a lot of IXYS
IXTQ30N60P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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