IXTQ30N50L2
- Mfr.Part #
- IXTQ30N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO3P
- Stock
- 9,280
- In Stock :
- 9,280
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 24 Weeks
- Threshold Voltage :
- 2.5V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Power Dissipation-Max :
- 400W Tc
- Rise Time :
- 117 ns
- Number of Terminations :
- 3
- FET Feature :
- --
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Length :
- 15.8 mm
- Packaging :
- Tube
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 500V
- JESD-609 Code :
- e3
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Supplier Device Package :
- TO-3P
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Nominal Vgs :
- 2.5 V
- Power Dissipation :
- 400W
- Pbfree Code :
- yes
- Width :
- 4.9 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Continuous Drain Current (ID) :
- 30A
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.2Ohm
- Product Status :
- Active
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Terminal Finish :
- PURE TIN
- Tradename :
- Linear L2
- Height :
- 20.3 mm
- Power Dissipation (Max) :
- 400W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTQ30
- Published :
- 2008
- Type :
- Linear L2 Power MOSFET
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Position :
- Single
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Series :
- Linear L2™
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 25V
- Datasheets
- IXTQ30N50L2

N-Channel Tube 200m Ω @ 15A, 10V ±20V 8100pF @ 25V 240nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ30N50L2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 60A, its maximum pulsed drain current.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ30N50L2 Features
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTQ30N50L2 Applications
There are a lot of IXYS
IXTQ30N50L2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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