IXTQ150N15P

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Mfr.Part #
IXTQ150N15P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 150V 150A TO3P
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
JESD-609 Code :
e3
Tradename :
PolarHT
Packaging :
Tube
Product Category :
MOSFET
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
100 ns
Power Dissipation (Max) :
714W (Tc)
Transistor Application :
SWITCHING
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
150V
Number of Pins :
3
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
340 A
Transistor Element Material :
SILICON
Type :
PolarHT Power MOSFET
DS Breakdown Voltage-Min :
150 V
Length :
15.8 mm
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Fall Time (Typ) :
28 ns
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Package / Case :
TO-3P-3, SC-65-3
Configuration :
Single
Rise Time :
33ns
Number of Terminals :
3
Pin Count :
3
Drain to Source Breakdown Voltage :
150V
Height :
20.3 mm
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
150A
Terminal Form :
THROUGH-HOLE
Power Dissipation :
714W
Width :
4.9 mm
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Threshold Voltage :
5V
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Surface Mount :
No
Mounting Style :
Through Hole
Brand :
IXYS
RoHS :
Details
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Series :
PolarHT™
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Terminations :
3
Supplier Device Package :
TO-3P
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Package :
Tube
Base Product Number :
IXTQ150
Drain-source On Resistance-Max :
0.013 Ω
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Published :
2006
Reach Compliance Code :
Compliant
Factory Lead Time :
24 Weeks
Product Status :
Active
Pbfree Code :
yes
Maximum Operating Temperature :
+ 175 C
Package Shape :
RECTANGULAR
Power Dissipation-Max :
714W Tc
Subcategory :
MOSFETs
Avalanche Energy Rating (Eas) :
2500 mJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ150N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Type:PolarHT Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, IXTQ150N15P pinout, IXTQ150N15P datasheet PDF, IXTQ150N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ150N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ150N15P


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-3P-3, SC-65-3

IXTQ150N15P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 150A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Peak drain current for this device is 340 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ150N15P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXTQ150N15P Applications


There are a lot of IXYS
IXTQ150N15P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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